Energy storage device with encapsulation anchoring

ABSTRACT

Approaches herein provide improved encapsulation of an energy storage device. In one approach, a thin film storage device stack is formed atop a first side of a substrate, and an encapsulant is formed over the thin film storage device stack. A recess formed in the substrate adjacent the thin film storage device stack provides an anchoring point for the encapsulant. In some approaches, the recess is provided partially through a depth of the substrate, and has a geometry to promote physical coupling between the encapsulant and the substrate.

RELATED APPLICATIONS

This Application claims priority to U.S. provisional patent application No. 62/322,415, filed Apr. 14, 2016, entitled “Volume Change Accommodating TFE Materials” and incorporated by reference herein in its entirety.

FIELD

The present embodiments relate to thin film encapsulation (TFE) technology used to protect active devices and, more particularly, to an energy storage device with an anchored encapsulant.

BACKGROUND

Thin film encapsulation (TFE) technology is often employed in devices where the devices are purely electrical devices or electro-optical devices, such as Organic Light Emitting Diodes (OLED). Other than possibly experiencing a generally small global thermal expansion from heat generation during the device operation, these electrical devices and electro-optical devices do not exhibit volume changes during operation, since just electrons and photons are transported within the devices during operation. Such global effects due to global thermal expansion of a device may affect in a similar fashion every component of a given device including the TFE, and thus, may not lead to significant internal stress. In this manner, the functionality of the TFE in a purely electrical device or electro-optic device is not generally susceptible to stresses from non-uniform expansion during operation.

Notably, in an electrochemical device (“chemical” portion), matter such as elements, ions, or other chemical species having a physical volume (the physical volume of electrons may be considered to be approximately zero) are transported within the device during operation with physical volume move. For known electrochemical devices, e.g., thin film batteries (TFB) based upon lithium (Li), Li is transported from one side to the other side of a battery as electrons are transported in an external circuit connected to the TFB, where the electrons move in an opposite direction to the chemical charge carriers.

One particular example of the volume change experienced by a Li TFB occurs when charging a thin film battery having a lithium cobalt oxide (LiCoO₂) cathode (˜15 μm to 17 μm thick LiCoO₂). An amount of Li equivalent to several micrometers thick layer, such as 6 micrometers (assuming 100% dense Li), may be transported to the anode when loading is approximately 1 mAhr/cm². When Li returns to the cathode side in a discharge process, a comparable volume reduction may result on the anode side (assuming 100% efficiency). The cathode side may also undergo a volume change in an opposite manner, though such changes are generally smaller as compared to the anode side.

During a battery cell charge and discharge cycle, the encapsulation layer may lift along cell edges due to a combination of laser edge cutting heat affect zone (HAZ) and poor encapsulation layer adhesion along the cell edges. Such cell edge delamination leads to the premature introduction of unwanted moisture and gas penetration, resulting in an adverse impact to the battery cell performance. Furthermore, the encapsulation layer cell edge moisture blocking lateral width design rule is constrained to maximize cell area for higher cell capacity. This leaves minimal cell edge surface area available for lateral encapsulation protection and, as a result, the moisture penetration lateral pathway is short.

With respect to these and other considerations the present disclosure is provided.

SUMMARY OF THE DISCLOSURE

In view of the foregoing, approaches herein provide improved encapsulation of an energy storage device. In one approach, a thin film storage device stack is formed atop a first side of a substrate, and an encapsulant is formed over the thin film storage device stack. Prior to formation of the encapsulant, a recess may be formed in the substrate adjacent the thin film storage device stack, wherein the encapsulant extends into the recess. In some approaches, the recess is provided partially through a depth of the substrate, and has a geometry to promote anchoring of the encapsulant therein.

An exemplary energy storage device in accordance with the present disclosure may include a thin film storage device stack formed atop a first side of a substrate, an encapsulant formed over the thin film storage device stack, and a recess formed in the substrate adjacent the thin film storage device stack, wherein the encapsulant extends into the recess.

An exemplary micro battery in accordance with the present disclosure may include a thin film storage device stack formed atop an upper surface of a substrate, and a thin film encapsulant formed over the substrate, wherein the thin film encapsulant adheres to exposed surfaces of the thin film storage device stack and to the upper surface of the substrate. The micro battery further includes a recess formed in the substrate adjacent the thin film storage device stack, wherein the thin film encapsulant is secured within the recess.

An exemplary method for forming a micro battery cell in accordance with the present disclosure may include providing a thin film storage device stack atop a first side of a substrate, providing a recess in the substrate adjacent the thin film storage device stack, and forming a thin film encapsulant over the thin film storage device stack, wherein the thin film encapsulant is formed within the recess formed in the substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings illustrate exemplary approaches of the disclosed embodiments so far devised for the practical application of the principles thereof, and wherein:

FIG. 1A depicts a top view of a thin film storage device stack and a recess of a micro battery cell in accordance with exemplary embodiments of the present disclosure;

FIG. 1B depicts a side cross-sectional view of the thin film storage device stack and the recess of a micro battery cell of FIG. 1A in accordance with exemplary embodiments of the present disclosure;

FIG. 2A depicts a top view of an encapsulant formed over the micro battery cell in accordance with exemplary embodiments of the present disclosure;

FIG. 2B depicts a side cross-sectional view of the encapsulant formed over the micro battery cell of FIG. 2A in accordance with exemplary embodiments of the present disclosure;

FIG. 2C depicts a close-up side cross-sectional view of one of the recesses shown in FIG. 2B, in accordance with exemplary embodiments of the present disclosure;

FIG. 3A depicts a top view of a first layer of an encapsulant formed over a thin film storage device stack of a micro battery cell in accordance with exemplary embodiments of the present disclosure;

FIG. 3B depicts a side cross-sectional view of the first layer of the encapsulant formed over the thin film storage device stack of the micro battery cell of FIG. 3A in accordance with exemplary embodiments of the present disclosure;

FIG. 4A depicts a top view of a second layer of an encapsulant formed over a micro battery cell in accordance with exemplary embodiments of the present disclosure;

FIG. 4B depicts a side cross-sectional view of the second layer of the encapsulant formed over the micro battery cell of FIG. 4A in accordance with exemplary embodiments of the present disclosure;

FIGS. 5A-C depict top views of various recess arrangements in accordance with exemplary embodiments of the present disclosure; and

FIGS. 6A-B depict side cross-sectional views of various recess geometries in accordance with exemplary embodiments of the present disclosure.

The drawings are not necessarily to scale. The drawings are merely representations, not intended to portray specific parameters of the disclosure. The drawings are intended to depict exemplary embodiments of the disclosure, and therefore are not be considered as limiting in scope. In the drawings, like numbering represents like elements.

Furthermore, certain elements in some of the figures may be omitted, or illustrated not-to-scale, for illustrative clarity. The cross-sectional views may be in the form of “slices”, or “near-sighted” cross-sectional views, omitting certain background lines otherwise visible in a “true” cross-sectional view, for illustrative clarity. Furthermore, for clarity, some reference numbers may be omitted in certain drawings.

DETAILED DESCRIPTION

One or more approaches in accordance with the present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, where embodiments of devices and methods are shown. The approaches may be embodied in many different forms and are not to be construed as being limited to the embodiments set forth herein. Instead, these embodiments are provided so this disclosure will be thorough and complete, and will fully convey the scope of the devices and methods to those skilled in the art.

For the sake of convenience and clarity, terms such as “top,” “bottom,” “upper,” “lower,” “vertical,” “horizontal,” “lateral,” and “longitudinal” will be used herein to describe the relative placement and orientation of these components and their constituent parts, each with respect to the geometry and orientation of the micro battery as appearing in the figures. The terminology will include the words specifically mentioned, derivatives thereof, and words of similar import.

As used herein, an element or operation recited in the singular and proceeded with the word “a” or “an” is to be understood as including plural elements or operations, until such exclusion is explicitly recited. Furthermore, references to “one embodiment,” “an embodiment,” or “exemplary embodiment” of the present disclosure are not intended as limiting. Additional embodiments may also incorporate the recited features.

As further described herein, the present disclosure provides techniques for anchoring one or more encapsulation layers around an active region of a micro battery cell by first introducing a cell edge substrate trench or recess prior to starting the encapsulation process. The trench or recess may be a continuous feature or plurality of repeating features provided around the battery cell edge, and can be tailored by design depending on a cell active area (e.g., cell capacity) to actual area utilization ratio trade off. The trench or repeating feature edge(s) can be sharp or sloped depending on a sidewall coating ability of the encapsulant. An optional adhesion promoter substrate surface treatment may be implemented to further enhance the adhesion of the substrate surface to the encapsulant. The encapsulant may be coated and anchored within the recesses to enhance edge adhesion and minimize edge delamination. Furthermore, the cell edge substrate trench or recess provides longer moisture penetration pathway(s) via the encapsulant to help keep moisture from reaching the active region of a micro battery cell, thus improving the battery cell cycle life and charge retention.

Turning now to FIGS. 1A-B, respective top and side cross-sectional views of a micro battery cell 100 of a cell matrix according to various embodiments of the disclosure will be described in greater detail. As shown, the micro battery cell 100 includes a thin film storage device stack, such as a thin film storage device stack 130, and a recess 102 formed in a first surface (e.g., an upper/top surface) 108 of a substrate 112. In some embodiments, the recess 102 is a continuously formed moat-like anchoring trench formed partially through the substrate 112, for example, to a depth ‘D,’ and has a generally rectangular shape. In other embodiments, the recess 102 may take on various different forms, as will be described in greater detail below.

The substrate 112 serves as a support for an energy storage device, such as a thin film solid state micro battery, and is made from a material suitably impermeable to environmental elements, has a relatively smooth processing surface to form thin films thereupon. The substrate 112 may also have sufficient mechanical strength to support the deposited thin films at fabrication temperatures and at battery operational temperatures. For example, the substrate 112 may be an insulator, semiconductor, or a conductor, depending upon the intended electrical properties of the exterior surfaces. More specifically, the substrate 112 may be made from a ceramic, metal or glass, such as, for example, aluminum oxide, silicate glass, or even aluminum or steel, depending on the application.

In one embodiment, the substrate 112 comprises mica, a layered silicate typically having a muscovite structure, and a stoichiometry of KAl₃Si₃O₁₀(OH)₂. Mica has a six-sided planar monoclinic crystalline structure with good cleavage properties along the direction of the large planar surfaces. Because of the crystal structure of mica, the substrate 112 may be split into thin foils along its basal lateral cleavage planes to provide thin substrates having surfaces smoother than most chemically or mechanically polished surfaces.

As further shown in FIGS. 1A-B, the thin film storage device stack 130 is formed on the substrate 112 along the first surface 108 thereof. The thin film storage device stack 130 may constitute active layers of an electrochemical device such as a thin film solid state battery, micro battery device, electrochromic window, or other electrochemical device. As shown, the thin film storage device stack 130 has a generally rectangular shape, wherein the recess 102 is provided adjacent multiple sides thereof. In some embodiments, the thin film storage device stack 130 is formed prior to the recess 102. In other embodiments, the recess 102 is formed prior to the formation of the thin film storage device stack 130.

The thin film storage device stack 130 may encompass the substrate 112 and a source region disposed on the substrate 112. In various embodiments, the source region may represent a cathode of the thin film storage device stack 130, wherein the source region acts as a source of a diffusant such as lithium, and wherein the diffusant may reversibly diffuse to and from the source region. The thin film storage device stack 130 may also include an intermediate region (not specifically shown) disposed on the source region, and a selective expansion region disposed on the intermediate region. The selective expansion region may be an anode region, for example, of the thin film storage device stack 130. In some embodiments, the thin films of each layer of the thin film storage device stack 130 may be formed by thin film fabrication processes, such as for example, physical or chemical vapor deposition methods (PVD or CVD), oxidation, nitridation or electro-plating.

Although not shown, in some embodiments, an electrolyte layer may be provided between the anode and the cathode of the thin film storage device stack 130. In some embodiments, the electrolyte layer may be, for example, an amorphous lithium phosphorus oxynitride film, referred to as a LiPON film. In one non-limiting embodiment, the LiPON film is of the form Li_(x)PO_(y)N_(z). In one approach, the electrolyte layer has a thickness of from approximately 0.1 microns to approximately 5 microns. The electrolyte thickness is suitably large to provide sufficient protection from shorting of the cathode and the anode, and suitably small to reduce ionic pathways to minimize electrical resistance and reduce stress.

In some embodiments, the anode and the cathode of the thin film storage device stack 130 each include an electrochemically active material, such as amorphous vanadium pentoxide V₂O₅, or one of several crystalline compounds, such as TiS₂, LiMnO₂, LiMn₂O₂, LiMn₂O₄, LiCoO₂ and LiNiO₂. In one non-limiting embodiment, the anode is made from Li and the cathode is made from LiCoO₂. A suitable thickness for the anode or cathode may be from approximately 0.1 microns to approximately 50 microns.

The thin film storage device stack 130 may also include one or more adhesion layers (not shown) deposited on the substrate 112 or the surfaces of any of the other layers of the thin film storage device stack 130, to improve adhesion of overlying layers. The adhesion layer may comprise a metal such as, for example, titanium, cobalt, aluminum, or other metals. In some embodiments, the adhesion layer may be a ceramic material such as, for example, AlO_(x), having a stoichiometry of A₂O₃.

Turning to FIGS. 2A-C, respective top and side cross-sectional views of the micro battery cell 100 with an encapsulant 140 formed thereon according to various embodiments of the disclosure will now be described. As shown, the encapsulant 140 is formed over the micro battery cell 100 so the encapsulant 140 adheres to the thin film storage device stack 130, the first surface 108 of the substrate 112, and within the recess 102. The encapsulant 140 is intended to extend into the recess 102 to anchor the encapsulant 140 to the substrate 112, as well as to provide a meandering pathway for oxidants. To accomplish this, the encapsulant 140 may expand to partially or completely fill the recess 102. In exemplary embodiments, as best shown in FIG. 2C, the encapsulant 140 adheres to a sidewall 150 and a bottom surface 152 of the recess 102. A top surface 154 of the encapsulant 140 within the recess 102 is recessed below the first surface 108 of the substrate 112, for example, to a depth ‘D1.’ As a result, the encapsulant 140 is non-planar, and instead conforms to the contours of the recess 102 to provide a meandering path for oxidant permeation. Once formed, the encapsulant 140, the thin film storage device stack 130, and the substrate 112 together constitute an encapsulated micro energy storage device 144.

In various embodiments, the encapsulant 140 is a thin film encapsulant including pliable, physical volume accommodating layers capable of conforming to the geometries of the micro battery cell 100, including the recess 102. In one embodiment, the encapsulant 140 may be made from a polymer material having good sealing properties to protect the sensitive battery components of the thin film storage device stack 130 from the external environment. For example, the polymer material of the encapsulant 140 may be selected to provide a good moisture barrier, and have a sufficiently low water permeability rate to allow the layers of the thin film storage device stack 130 to survive in humid external environments.

In exemplary embodiments, the encapsulant 140 may include parylene, dip or spin coated polymers or dielectric materials, sprayed on polymers or dielectric coatings, or CVD dielectric coatings. In one embodiment, the encapsulant 140 may be a dyadic thin film encapsulant, wherein the dyad may include polymer and dielectric, or polymer and metal layers. The encapsulant 140 may be formed using a vapor or a liquid phase coating technique to allow the encapsulant 140 to form within each of the recesses 102. This has the advantage of using the inherent cohesive strength of the encapsulant 140 to hold the encapsulant 140 in place within the recesses 102 should the thin film storage device stack 130 swell, for example, when charged.

In various embodiments, the encapsulant 140 may have a varied dimension in order to accommodate changes in volume or thickness of different materials in expansion regions. For example, in the case the anode or a portion of the anode of the thin film storage device stack 130 constitutes a selective expansion region, the encapsulant 140 may expand or contract in thickness to accommodate the increase or decrease in anode thickness, resulting in less stress, less mechanical failure, and better protection of the layers of the thin film storage device stack 130.

In other embodiments, the encapsulant 140 may be a thermoset or thermoplastic polymer capable of undergoing a chemical change during processing to become “set” to form a hard solid material. The thermoset polymer can be a highly cross-linked polymer having a three-dimensional network of polymer chains. Thermoset polymer materials undergo a chemical as well as a phase change when heated. Due to their tightly cross-linked structure, thermoset polymers may be less flexible than most thermoplastic polymers.

In still other embodiments, the encapsulant 140 may be a melt processable thermoplastic polymer (e.g., a polymer formed when in a melted or viscous phase) malleable at high temperatures. The thermoplastic polymer is selected to soften at temperatures of from approximately 65° C. to approximately 200° C. to allow molding the polymer material around the battery cell without thermally degrading the battery cell. A suitable thermoplastic polymer includes for example, polyvinylidene chloride (PVDC).

Turning now to FIGS. 3A-4B, respective top and side cross-sectional views of an encapsulant 240 formed over a micro battery cell 200 according to various embodiments of the disclosure will be described in greater detail. As shown, the micro battery cell 200 includes many or all of the features previously described in relation to the substrate 112 and thin film storage device stack 130 of the micro battery cell 100 shown in FIGS. 1-3B and, as such, will not be described in further detail for the sake of brevity. In this embodiment, the encapsulant 240 may include a plurality of encapsulation layers. For example, as shown in FIGS. 3A-B, a first layer 241 of the encapsulant 240 is formed over a thin film storage device stack 230, and terminates along a first surface (e.g., an upper/top surface) 208 of a substrate 212. In some embodiments, the first layer 241 adheres to the exposed surfaces of the thin film storage device stack 230, yet does not extend into the recesses 202. In other embodiments, the first layer 241 of the encapsulant 240 is formed within the recess 202.

The first layer 241 of the encapsulant 240 may be a polymer having good sealing properties to protect the sensitive battery components of the thin film storage device stack 230 from the external environment. In various embodiments, the first layer 241 of the encapsulant 240 may be sprayed on or spin coated polymers and/or dielectric coatings, or CVD dielectric coatings.

As shown in FIGS. 4A-B, a second layer 243 of the encapsulant 240 may then be formed over the first layer 241. The second layer 243 may be formed over all of the micro battery cell 200 so the second layer 243 adheres to a top side of the first layer 241, the first surface 208 of the substrate 212, and within the recess 202. The second layer 243 of the encapsulant 240 is intended to flow into the recesses 202 to anchor the encapsulant 240 to the substrate 212. In exemplary embodiments, the second layer 243 of the encapsulant 240 may expand to partially or completely fill the recesses 202, thus increasing the physical coupling of the encapsulant 240 and the substrate 212.

In various embodiments, the second layer 243 of the encapsulant 240 may include parylene, dip coated or spin coated polymers or dielectric materials, sprayed on polymers or dielectric coatings, or CVD dielectric coatings. The second layer 243 of the encapsulant 240 may be formed using a vapor or a liquid phase coating technique to form the second layer 243 of the encapsulant within the recesses 202. This has the advantage of using the inherent cohesive strength of the second layer 243 of the encapsulant 240 to hold the encapsulant 240 in place within the recesses 202 should the thin film storage device stack 230 expand. In various embodiments, the first layer 241 and the second layer 243 of the encapsulant 240 may be different or the same material(s).

Turning now to FIGS. 5A-C, respective top views of various recess arrangements according to embodiments of the disclosure will be described in greater detail. As shown in FIG. 5A, a plurality of anchoring recesses 302 of a micro battery cell 300 may be formed proximate each corner of a thin film storage device stack 330. In this embodiment, each of the plurality of recesses 302 has a rectangular shape and may be formed partially or fully through the substrate 312. Two or more recesses of the plurality of recesses 302 may be formed on opposite sides of the thin film storage device stack 330, as shown. In other embodiments, a larger or smaller number of recesses 302 may be provided.

As further shown, the anchoring recesses 302 are joined together by a trench 303 formed partially through the substrate 312. In various embodiments, the trench 303 may have a different shape, and/or extend to a different depth, than the plurality of anchoring recesses 302. For example, the plurality of anchoring recesses 302 may extend fully through the substrate 312, yet the trench 303 is formed just partially into the substrate 312. The trench 303 may provide further anchoring of an encapsulant formed over the thin film storage device stack 330, as well as a continuous path around the thin film storage device stack 330 for oxidant/moisture permeation.

In the embodiment shown in FIG. 5B, a plurality of anchoring recesses 360 of a micro battery cell 362 may be formed proximate each side of a thin film storage device stack 331. In this embodiment, each of the plurality of anchoring recesses 360 has a circular shape and may be formed partially or fully through the substrate 364. Two or more of the anchoring recesses 360 may be formed along opposite sidewalls of the thin film storage device stack 331. In other embodiments, a larger or smaller number of anchoring recesses 360 may be provided. As further shown, the anchoring recesses 360 may be joined together by a trench 365 formed partially through the substrate 364. In various embodiments, the trench 365 is circular and may extend to a same or different depth than the plurality of anchoring recesses 360. The trench 365 may further anchor the encapsulant to the substrate 364, as well as provide a continuous path around the thin film storage device stack 330 for oxidant/moisture permeation.

In the embodiment shown in FIG. 5C, a plurality of generally rectangular shaped recesses 370 of a micro battery cell 372 may be formed around a thin film storage device stack 333. In this embodiment, the recesses 370 are anchoring recesses are formed partially or fully through the substrate 374. As shown, the recesses 370 extend along each side of the thin film storage device stack 333. During use, the recesses 370 anchor the encapsulant to the substrate 374, and act as a moisture barrier and passageway, leading moisture from the sensitive materials of the thin film storage device stack 333.

Turning now to FIGS. 6A-B, respective top views of various recess geometries according embodiments of the disclosure will be described in greater detail. One will appreciate the shapes and configurations of the exemplary recesses shown in FIGS. 6A-B are non-limiting, and various other geometries for receiving and securing an encapsulant therein are possible within the scope of the embodiments of the disclosure. As shown in FIG. 6A, an exemplary recess 402 in a substrate 412 of a micro battery cell 400 may be formed proximate a thin film storage device stack 430. The recess 402 has a bottom surface 421, formed to a depth ‘D1’, and a set of sloped sidewalls 423. The sloped sidewalls 423 define an upper section 425 and a lower section 427 of the recess 402, wherein a width ‘W1’ of the lower section 427 is greater than a width ‘W2’ of the upper section 425. An encapsulant (not shown) subsequently formed within the recess 402 is configured to conform to the geometry of the recess 402. For example, a portion of the encapsulant within the lower section 427 may be generally wider than the encapsulant along the upper section 425. Furthermore, the sloped sidewalls 423, together with the narrowing width of the recess 402 towards the upper section 425, make removal of the encapsulant 140 from the recess 402 more difficult, for example in the event the thin film storage device stack 430 expands.

In the embodiment demonstrated in FIG. 6B, the recess 402 has a bottom surface 421, formed to a depth ‘D1’, an upper section 425, and a lower section 427, wherein one or more cavities 445 of the lower section 427 extend laterally within the substrate 412. The sidewalls 423 of the upper section 425 may be sloped or straight. As shown, a width ‘W1’ of the lower section 427 is greater than a width ‘W2’ of the upper section 425. An encapsulant (not shown) subsequently formed within the recess 402 is configured to conform to the geometry of the recess 402. For example, the encapsulant may flow along the sidewalls 423 and into the cavity 445. The wider geometry of the cavity 445, together with the more narrow width of the recess 402 towards the upper section 425, increases physical coupling between the encapsulant and the recess 402. This makes removal of the encapsulant from the recess 402 more difficult, for example in the event the thin film storage device stack 430 expands.

In view of the foregoing, at least the following advantages are achieved by the embodiments disclosed herein. A first advantage is the reduction of encapsulant delamination responsible for the premature introduction of unwanted moisture and gas penetration using a set of encapsulant anchoring recesses. A second advantage includes the use of the encapsulant's self-cohesive strength to hold the encapsulation film layer(s) in place in the event the micro battery cell stack swells, for example, when charged. A third advantage includes providing an extended lateral moisture penetration pathway via the trench or recesses for improving the battery cell cycle life and charge retention. A fourth advantage includes an increased edge contact surface area using the trench or recesses, further aiding to adhesion of the encapsulant.

While certain embodiments of the disclosure have been described herein, the disclosure is not limited thereto, as the disclosure is as broad in scope as the art will allow and the specification may be read likewise. Therefore, the above description is not to be construed as limiting. Instead, the above description is merely as exemplifications of particular embodiments. Those skilled in the art will envision other modifications within the scope and spirit of the claims appended hereto. 

1. A micro energy storage device comprising: a thin film storage device stack formed atop a first side of a substrate; an encapsulant formed over the thin film storage device stack; and a recess formed in the substrate adjacent the thin film storage device stack, wherein the encapsulant extends into the recess.
 2. The micro energy storage device of claim 1, wherein the recess is an anchoring trench formed partially through a depth of the substrate.
 3. The micro energy storage device of claim 1, further comprising a plurality of recesses formed in the substrate.
 4. The micro energy storage device of claim 3, wherein two or more recesses of the plurality of recesses are formed on opposite sides of the thin film storage device stack.
 5. The micro energy storage device of claim 1, wherein the recess has a lower section and an upper section, and wherein a width of the lower section is greater than a width of the upper section.
 6. The micro energy storage device of claim 5, wherein the lower section comprises a cavity extending laterally within the substrate.
 7. The micro energy storage device of claim 1, wherein the encapsulant comprises a plurality of encapsulation layers.
 8. The micro energy storage device of claim 7, wherein a first layer of the plurality of encapsulation layers is formed over the thin film storage device stack and terminates along the first side of the substrate, and wherein a second layer of the plurality of encapsulation layers is formed over the first layer of the plurality of encapsulation layers and extends into the recess formed in the substrate.
 9. A micro battery, comprising: a thin film storage device stack formed atop an upper surface of a substrate; a thin film encapsulant formed over the substrate, the thin film encapsulant adhering to exposed surfaces of the thin film storage device stack and to the upper surface of the substrate; and a recess formed in the substrate adjacent the thin film storage device stack, wherein the thin film encapsulant is secured within the recess.
 10. The micro battery of claim 9, wherein the recess is an anchoring trench formed partially through a depth of the substrate.
 11. The micro battery of claim 9, further comprising a plurality of recesses formed in the substrate.
 12. The micro battery of claim 11, wherein two or more recesses of the plurality of recesses are formed on opposite sides of the thin film storage device stack.
 13. The micro battery of claim 9, wherein the recess has a lower section and an upper section, a width of the lower section being greater than a width of the upper section.
 14. The micro battery of claim 13, wherein the lower section comprises a cavity extending laterally within the substrate.
 15. The micro battery of claim 9, wherein the thin film encapsulant comprises a plurality of encapsulation layers, wherein a first layer of the plurality of encapsulation layers is formed over the thin film storage device stack and terminates along the upper side of the substrate, and wherein a second layer of the plurality of encapsulation layers is formed over the first layer of the plurality of encapsulation layers and extends into the recess formed in the substrate.
 16. A method of forming a micro battery cell, comprising: providing a thin film storage device stack on a first side of a substrate; providing a recess in the substrate adjacent the thin film storage device stack; and forming a thin film encapsulant over the thin film storage device stack, wherein the thin film encapsulant is further formed within the recess formed in the substrate.
 17. The method of claim 16, further comprising forming a plurality of recesses in the substrate, wherein two or more recesses of the plurality of recesses are formed on opposite sides of the thin film storage device stack.
 18. The method of claim 16, wherein the recess includes a lower section and an upper section, and wherein a width of the lower section is greater than a width of the upper section.
 19. The method of claim 16, wherein forming the thin film encapsulant comprises: forming a first layer over the thin film storage device stack, wherein the first layer terminates along the first side of the substrate; and forming a second layer over the first layer, wherein the second layer extends into the recess formed in the substrate.
 20. The method of claim 16, wherein the recess is an anchoring trench formed partially through a depth of the substrate. 